(Hong Kong)
Product Summary
The MA2J11200L is a Silicon epitaxial planar type Switching Diode.
Parametrics
MA2J11200L absolute maximum ratings: (1)Reverse voltage (DC) VR 40 V; (2)Peak reverse voltage VRM 40 V; (3)Average forward current IF(AV) 200 mA; (4)Peak forward current IFM 600 mA; (5)Non-repetitive peak forward surge current IFSM 1A; (6)Junction temperature Tj 150℃; (7)Storage temperature Tstg -55 to +150℃.
Features
MA2J11200L features: (1)Small S-mini type package, allowing high-density mounting; (2)Ensuring the average forward current capacity IF(AV) = 200 mA.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 MA2J11200L |
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DIODE SWITCH 40V 200MA S-MINI 2P |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
 |
MA2J111 |
Other |
|
Data Sheet |
Negotiable |
|
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|
MA2J112 |
Other |
|
Data Sheet |
Negotiable |
|
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|
MA2J11200L |
|
DIODE SWITCH 40V 200MA S-MINI 2P |
Data Sheet |
Negotiable |
|
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|
MA2J113 |
Other |
|
Data Sheet |
Negotiable |
|
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|
MA2J1130GL |
|
DIODE SWITCH 80V 200MA S-MINI 2P |
Data Sheet |
Negotiable |
|
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|
MA2J11400L |
|
DIODE RECT 150V 200MA S-MINI 2P |
Data Sheet |
Negotiable |
|
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