Product Summary

The mrf559 is a RF & microwave discrete low power transistor. Designed primarily for wideband large signal stages in the UHF frequency range.

Parametrics

mrf559 absolute maximum ratings: (1)VCEO, Collector-Emitter Voltage: 16 Vdc; (2)VCBO, Collector-Base Voltage: 30 Vdc; (3)VEBO, Emitter-Base Voltage: 3.0 Vdc; (4)IC, Collector Current: 150 mA.

Features

mrf559 features: (1)Specified @ 12.5 V, 870 MHz Characteristics; (2)Output Power = .5 W; (3)Minimum Gain = 8.0 dB; (4)Efficiency 50%; (5)Cost Effective Macro X Package; (6)Electroless Tin Plated Leads for Improved Solderability.

Diagrams

mrf559 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MRF559G
MRF559G

TRANS NPN 16V 150MA MACRO X
Data Sheet
0-1: $1.59
1-10: $1.44
10-25: $1.28
25-100: $1.15
100-250: $1.03
250-500: $0.90
500-1000: $0.74
1000-2500: $0.69
2500-5000: $0.67
MRF559LF
MRF559LF
Advanced Semiconductor, Inc.
Transistors RF Bipolar Power RF Transistor
Data Sheet
0-1: $1.35
1-10: $1.13
10-25: $1.01
25-50: $0.90
MRF559
MRF559
TriQuint Semiconductor
RF Amplifier RF Bipolar Trans
Data Sheet
Negotiable