(Hong Kong)
Product Summary
The blf1047 is a Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package(SOT541A) with a ceramic cap. The common source is connected to the mounting flange. The blf1047 is used for Communication transmitter applications in the UHF frequency range.
Parametrics
blf1047 absolute maximum ratings: (1)drain-source voltage: 65 V; (2)VGS gate-source voltage: ±20 V; (3)ID drain current (DC): 9 A; (4)Tstg storage temperature: −65 to +150 °C; (5)Tj junction temperature: 200 °C.
Features
blf1047 features: (1)High power gain; (2)Easy power control; (3)Excellent ruggedness; (4)Source on underside eliminates DC isolators, reducing common mode inductance; (5)Designed for broadband operation (HF to 1 GHz).
Diagrams
| Image | Part No | Mfg | Description |  |
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 BLF1047 |
Other |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||
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BLF1043 |
NXP Semiconductors |
Transistors RF MOSFET Power RF LDMOS 10W UHF |
Data Sheet |
Negotiable |
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BLF1043,112 |
NXP Semiconductors |
Transistors RF MOSFET Power RF LDMOS 10W UHF |
Data Sheet |
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BLF1043,135 |
NXP Semiconductors |
Transistors RF MOSFET Power TRANSISTOR UHF PWR LDMOS |
Data Sheet |
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BLF1046 |
NXP Semiconductors |
Transistors RF MOSFET Power RF LDMOS 45W UHF |
Data Sheet |
Negotiable |
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BLF1046,112 |
NXP Semiconductors |
Transistors RF MOSFET Power RF LDMOS 45W UHF |
Data Sheet |
|
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|
BLF1046,135 |
NXP Semiconductors |
Transistors RF MOSFET Power TRANSISTOR UHF PWR LDMOS |
Data Sheet |
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