Product Summary

The BLF522 is an UHF power MOS transistor that is produced by Philips Semiconductors. Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 6-lead, SOT171 flange envelope, with a ceramic cap. All leads are isolated from the flange.

Parametrics

BLF522 absolute maximum ratings: (1)drain-source voltage: 40V; (2)gate-source voltage: ±20V; (3)DC drain current: 1.8A; (4)storage temperature: -65 to +150°C; (5)junction temperature: 200°C; (6)total power dissipation: 20 W.

Features

BLF522 features: (1)High power gain; (2)Easy power control; (3)Good thermal stability; (4)Designed for broadband operation; (5)Withstands full load mismatch.

Diagrams

BLF522 pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BLF522
BLF522
Other

Data Sheet
Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BLF521
BLF521
Other

Data Sheet
Negotiable 
BLF521,112
BLF521,112
NXP Semiconductors
Transistors RF MOSFET Power TRANSISTOR UHF PWR DMOS
Data Sheet
0-24: $21.53
24-25: $19.91
25-100: $18.65
100-250: $17.42
BLF522
BLF522
Other

Data Sheet
Negotiable 
BLF542
BLF542
Other

Data Sheet
Negotiable 
BLF542,112
BLF542,112
NXP Semiconductors
Transistors RF MOSFET Power RF DMOS 5W UHF
Data Sheet
0-24: $26.37
24-25: $24.38
25-100: $22.85
100-250: $21.35
BLF543
BLF543
Other

Data Sheet
Negotiable